Photoluminescence and photoconductivity studies on amorphous and crystalline ZnO thin films obtained by sol-gel method

摘要

Amorphous and crystalline ZnO thin films were obtained by the sol-gel process. A precursor solution of ZnO was synthesized by using zinc acetate dehydrate as inorganic precursor at room temperature. The films were spin-coated on silicon and glass wafers and gelled in humid air. The films were calcined at 450 ℃ for 15 min to produce ZnO nanocrystals with a wurtzite structure. Crystalline ZnO film exhibits an absorption band located at 359 nm (3.4 eV). Photoconductivity technique was used to determine the charge transport mechanism on both kinds of films. Experimental data were fitted with straight lines at darkness and under illumination at 355 and 633 nm wavelengths. This indicates an ohmic behavior. The photovoltaic and photoconductivity parameters were determined from the current density versus the applied electrical field results.