Effect of Sn doping on the structure, magnetism and thermal expansion of Mn_3Ga_(1_x)Sn_xN (x = 0.1,0.3,0.5 and 0.7) compounds

摘要

The Sn-doped Mn_3Ga_(1-x)Sn_xN compounds were prepared by solid-state sintering methods. The negative thermal expansion (NTE) performance and correlated structure and magnetism were investigated. A near zero thermal expansion (ZTE) behavior for Mn_3GaQ_(0.3)Sn_(0.7)N, exhibiting a coefficient of thermal expansion (CTE) of -0.45 × 10~(-6) K~(-1) in a temperature range from 480 to 513 K, was discovered. The ZTE mechanism is proposed based upon the temperature dependence of dMIdT with respect to various Sn contents. The present ZTE material is probably regarded as a promising candidate for fabricating precision devices used far from ambient temperature circumstance.