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首页> 外文期刊>Applied Physics >Crystal growth and characterization of semi-organic 2-amino-5-nitropyridinium bromide (2A5NPBr) single crystals for third-order nonlinear optical (NLO) applications
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Crystal growth and characterization of semi-organic 2-amino-5-nitropyridinium bromide (2A5NPBr) single crystals for third-order nonlinear optical (NLO) applications

机译:用于三阶非线性光学(NLO)应用的半有机2-氨基-5-硝基吡啶溴化物(2A5NPBr)单晶的晶体生长和表征

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摘要

Semi-organic nonlinear optical (NLO) 2-amino-5-nitropyridinium bromide (2A5NPBr) single crystals have been grown by slow evaporation solution technique (SEST) with the growth period of 60 days. The single-crystal XRD analysis confirms the unit cell parameters of the grown crystal. The crystallinity of grown 2A5NPBr was analyzed by powder X-ray diffraction (PXRD) measurement. The presence of functional groups of 2A5NPBr crystal was confirmed by Fourier transform infrared (FTIR) spectrum analysis. The optical transmittance of the grown crystal was analyzed by UV-Vis-NIR analysis. It shows good transparency in the visible and NIR region and it is favorable for nonlinear optical (NLO) device applications. The chemical etching study was carried out and it reveals that the grown crystal has less dislocation density. The photoconductivity study reveals that the grown crystal possesses positive photoconductive nature. The thermal stability of the crystal has been investigated by thermogravimetric (TG) and differential thermal analysis (DTA). The dielectric constant and dielectric loss as a function of frequency were measured. The electronic polarizability (a) of 2A5NPBr molecule has been calculated theoretically by different ways such as Perm analysis, Clausius-Mossotti relation, Lorentz-Lorenz equation, optical bandgap, and coupled dipole method (CDM). The obtained values of electronic polarizability (a) are in good agreement with each other. Laser damage threshold (LDT) of 2A5NPBr crystal has been measured using Nd: YAG laser with the wavelength of 1064 nm. Third-order nonlinear optical property of the grown crystal was studied by Z-scan technique using He-Ne laser of wavelength 632.8 nm.
机译:半有机非线性光学(NLO)2-氨基-5-硝基吡啶溴化物(2A5NPBr)单晶体已通过缓慢蒸发溶液技术(SEST)生长,生长时间为60天。单晶XRD分析证实了所生长晶体的晶胞参数。通过粉末X射线衍射(PXRD)测量分析生长的2A5NPBr的结晶度。通过傅立叶变换红外(FTIR)光谱分析证实了2A5NPBr晶体的官能团的存在。通过UV-Vis-NIR分析来分析生长的晶体的透光率。它在可见光和近红外区域显示出良好的透明性,对于非线性光学(NLO)器件应用非常有利。进行了化学蚀刻研究,结果表明生长的晶体具有较小的位错密度。光电导性研究表明,生长的晶体具有正光电导性。晶体的热稳定性已通过热重分析(TG)和差热分析(​​DTA)进行了研究。测量介电常数和介电损耗随频率的变化。理论上已通过不同的方法,例如彼尔姆分析,Clausius-Mossotti关系,Lorentz-Lorenz方程,光学带隙和耦合偶极方法(CDM),计算了2A5NPBr分子的电子极化率(a)。获得的电子极化率(a)的值彼此良好一致。已使用波长为1064 nm的Nd:YAG激光测量了2A5NPBr晶体的激光损伤阈值(LDT)。通过Z扫描技术,使用波长为632.8 nm的He-Ne激光,研究了生长晶体的三阶非线性光学特性。

著录项

  • 来源
    《Applied Physics》 |2017年第12期|780.1-780.15|共15页
  • 作者单位

    SSN Research Centre, SSN College of Engineering, Chennai, Tamilnadu 603 110, India;

    SSN Research Centre, SSN College of Engineering, Chennai, Tamilnadu 603 110, India;

    SSN Research Centre, SSN College of Engineering, Chennai, Tamilnadu 603 110, India;

    SSN Research Centre, SSN College of Engineering, Chennai, Tamilnadu 603 110, India;

    SSN Research Centre, SSN College of Engineering, Chennai, Tamilnadu 603 110, India;

    SSN Research Centre, SSN College of Engineering, Chennai, Tamilnadu 603 110, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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