Dielectric properties of thin-film ZrO₂ up to 50 GHz for RF MEMS switches

摘要

The dielectric properties of zirconium dioxide (ZrO₂) ceramic thin films were characterized up to 50 GHz using coplanar waveguides (CPWs) and metal–insulator–metal (MIM) capacitors with top circular electrodes. The ZrO₂ films were deposited using a chemical solution onto high-resistivity Si wafers and metal layers. The real part of the dielectric constant of approximately 22 and 26 was extracted at 50 GHz for CPW and MIM structures, respectively, and the loss tangent was approximately 0.09 at 50 GHz. C–V and I–V measurements were carried out to determine low-frequency and DC dielectric properties. The measurement results indicate that ZrO₂ is a promising material to be used as a dielectric layer for radio-frequency (RF) microelectromechanical systems (MEMS) capacitive switches.