Low temperature uniaxial growth of conducting LaNiO₃ thin films on glass substrates with RbLaNb₂O₇ seed layer

摘要

Conducting LaNiO₃ thin films have been fabricated on the borosilicate glass substrates with and without the uniaxial oriented RbLaNb₂O₇ seed layer by an excimer laser assisted metal organic deposition process with a KrF laser irradiation at 400°C in air. The LaNiO₃ thin film prepared on the seed layer had a very high Lotgering factor at F(100)=0.971, indicating highly (100)-oriented growth. The obtained LaNiO₃ thin films with and without the seed layer showed low resistivity values, 4.42 and 1.02 mΩ cm at room temperature, respectively. The ρ value of the (100)-oriented LaNiO₃ film on the seed layer was comparably lowered to that of the films prepared at high process temperatures reported in the previous reports.