Numerical analysis of 2D tunable HIS on GaAs support

摘要

Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric constant gallium-arsenide (GaAs) substrate hosts the embedded active FET switches, allowing dynamic changes in the propagation conditions of the electromagnetic wave. The position, the aperture of band-gaps and hence the value of the effective dielectric constant can be controlled. These effects will be monitored through the change of the scattering parameters for different numbers of repetition of the unit cell in the transverse direction.