Nanoscale modification of Ni/Al interfaces by low-energy O₂+mathrm{O}_{2}^{+} reactive ion beam mixing

摘要

The kinetics of growth, composition and electronic structure of thin oxide films formed by reactive ion beam mixing (IBM) of Ni/Al interfaces bombarded with low-energy (3-keV) O₂+mathrm{O}_{2}^{+} ions have been studied at room temperature using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and factor analysis. Initially, NiO species are formed but, later, with increasing ion dose, Ni–Al mixed oxide species appear due to Al incorporation in the near-surface region. These changes are accompanied by a slight increase of the oxygen concentration and a decrease of the Ni/Al ratio in the thin oxide films formed. Angle-resolved X-ray photoelectron spectroscopy shows that Ni–Al mixed oxide species are located nearer the surface than NiO species. Experimental results have been compared with Monte Carlo TRIDYN simulations, suggesting that processes driven by residual defects or the reaction with oxygen predominate over pure ballistic mechanisms during reactive IBM of Ni/Al interfaces.