Fabrication of CdMnS nanowires with high temperature ferromagnetism

摘要

Diluted magnetic semiconductor Cd_0.94Mn_0.06S nanowires were fabricated by a modified DC electrochemical method depositing in anodic aluminum oxide nanoporous templates. It was found that crystal defects induced by nonuniform distribution of manganese were improved by heat treatment. Redistribution of manganese greatly improves the magnetic properties. A magnetic order transition temperature over 300 K was observed. Coercivities of 100 and 300 Oe were measured at 300 and 45 K, respectively.