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Burstein–Moss shift and room temperature near-band-edge luminescence in lithium-doped zinc oxide

机译:掺杂锂的氧化锌中的Burstein-Moss位移和室温近带边发光

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Nanopowders of pure and lithium-doped semiconducting ZnO (Zn1−x Li x O, where x= 0, 0.01, 0.03, 0.06, 0.09 and 0.15 in atomic percent (at.%)) are prepared by PEG-assisted low-temperature hydrothermal method. The average crystallite size is calculated using Debye–Scherrer formula and corrected for strain-induced broadening by Williamson–Hall (W–H) plot. The peak shift in XRD and the lattice constant of ZnO as a function of unit cell composition are predicted by Vegard’s law. The evolution of ZnO nanostructures from rod-shaped to particle nature is observed from TEM images and the influence of dopant on the morphology is investigated. The optical absorption measurement marks an indication that the incorporation of lithium ion into the lattice of ZnO widens the optical band gap energy from ∼2.60 to ∼3.20 eV. The near band edge (NBE) emission peak centered at ∼3.10 eV is considered to be the dominant emission peak in the PL spectra. Blue emission peak is not observed in doped ZnO, thus promoting defect-free nanoparticles. The Burstein–Moss shift serves as a qualitative tool to analyze the widening of the optical band gap and to study the shape of the NBE luminescence in doped ZnO nanopowders. FT-IR spectra are used to identify the strong metal–oxide (Zn–O) interaction.
机译:纯和掺杂锂的半导体ZnO(Zn 1-x Li x O的纳米粉,其中x = 0、0.01、0.03、0.06、0.09和0.15的原子百分比( (at。%))是通过PEG辅助低温水热法制备的。平均晶体尺寸使用Debye-Scherrer公式计算,并通过Williamson-Hall(W-H)图校正了应变诱发的展宽。 Vegard定律可预测XRD的峰位移和ZnO的晶格常数作为晶胞组成的函数。从TEM图像观察了ZnO纳米结构从棒状到颗粒性质的演变,并研究了掺杂剂对形貌的影响。光吸收测量结果表明,将锂离子掺入ZnO晶格会使光带隙能量从〜2.60 eV扩大到〜3.20 eV。在PL光谱中,以〜3.10 eV为中心的近带边缘(NBE)发射峰被认为是主要的发射峰。在掺杂的ZnO中未观察到蓝色发射峰,从而促进了无缺陷的纳米颗粒。 Burstein-Moss位移是定性工具,用于分析光学带隙的变宽并研究掺杂的ZnO纳米粉中NBE发光的形状。 FT-IR光谱用于识别强金属-氧化物(Zn-O)相互作用。

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