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Annealing of sputtered gold nano-structures

机译:溅射金纳米结构的退火

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Abstract The effects of annealing on gold structures sputtered onto glass substrate were studied using AFM, UV-Vis methods and electrical measurements. The colour of the as-deposited films changes from blue to green with increasing deposition time. After 1 hour annealing at 300°C the structures acquire red colour regardless of the film thickness. The annealing results in dramatic changes of surface morphology and roughness and creation of relatively large “spherolytic and hummock-like” structures in the gold layer. For deposited structures a non-zero optical band gap EgoptE_{mathrm{g}}^{mathrm{opt}} was determined from UV-Vis spectra using Tauc’s model and it indicates a semi-conducting character of the structures. The annealing leads to an increase of the band gap. Electrical resistance of the deposited unannealed structures decreases dramatically for deposition times above 50 s. For annealed structures the resistance fall comes until after 250 s deposition time.
机译:摘要利用原子力显微镜,紫外可见光谱法和电学测量方法研究了退火对溅射在玻璃基板上的金结构的影响。随着沉积时间的增加,沉积薄膜的颜色从蓝色变为绿色。在300°C退火1小时后,无论膜厚如何,结构均会呈现红色。退火导致表面形态和粗糙度发生戏剧性变化,并在金层中形成相对较大的“溶球和类山雀状”结构。对于沉积结构,使用Tauc's从UV-Vis光谱确定了非零光学带隙E g opt E_ {mathrm {g}} ^ {mathrm {opt}}模型,它表示结构的半导体特性。退火导致带隙的增加。当沉积时间超过50 s时,沉积的未退火结构的电阻会急剧下降。对于退火的结构,电阻下降持续到250 s沉积时间之后。

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