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Strong deep-UV and visible luminescence from GaN nanoparticles

机译:GaN纳米颗粒具有很强的深紫外线和可见光

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This paper reports strong deep-ultraviolet and visible photoluminescence (PL) of the GaN nanoparticles depending on the conversion time from Ga2O3 to GaN. Monoclinic β-Ga2O3 nanoparticles with a diameter of approximately 2.5–5.0 nm were fabricated prior to conversion to GaN. The Ga2O3 nanoparticles were converted to GaN in the tube furnace with NH3 flow at 900°C for 10, 30, 60, and 120 min. Depending on the conversion time, the converted GaN nanoparticle size became bigger with the increase of the conversion time. The characteristic GaN x-ray diffraction (XRD) peaks became bigger when the conversion time increased. The PL intensity drastically increased with the increase of the conversion time. The spectra profile completely overlapped for GaN samples converted for 10, 30, and 60 min, with the maximum peak at 390 nm. However, the PL spectrum slightly narrowed and red-shifted with the maximum peak at 400 nm for the GaN nanoparticles converted for 120 min.
机译:本文报道了从Ga 2 O 3 到GaN的转化时间,GaN纳米颗粒具有很强的深紫外线和可见光致发光(PL)。在转化为GaN之前,先制备了直径约为2.5-5.0 nm的单斜晶β-Ga 2 O 3 纳米粒子。将Ga 2 O 3 纳米颗粒在NH 3 流在900°C的10、30、60, 120分钟取决于转化时间,转化的GaN纳米颗粒尺寸随着转化时间的增加而变大。当转换时间增加时,GaN x射线衍射(XRD)的特征峰变大。 PL强度随着转化时间的增加而急剧增加。转换10分钟,30分钟和60分钟的GaN样品的光谱图完全重叠,最大峰在390 nm处。但是,对于120分钟的GaN纳米粒子而言,PL光谱略微变窄并发生红移,最大峰位于400 nm。

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