Publisher’s Note: “Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers” [Appl. Phys. Lett. 101, 051111 (2012)]

Mandal Krishna C.; Muzykov Peter G.; Russell Terry J.

首页> 外文期刊>Applied Physics Letters >Publisher’s Note: “Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers” [Appl. Phys. Lett. 101, 051111 (2012)]

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Publisher’s Note: “Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers” [Appl. Phys. Lett. 101, 051111 (2012)]

机译：出版商的注释：“ n型4H-SiC外延层上低能量范围内的高灵敏度X射线探测器” [Appl。物理来吧101，051111（2012）]

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来源
《Applied Physics Letters》 |2012年第9期|p.099901.1-099901.1|共1页
作者
Mandal Krishna C.; Muzykov Peter G.; Russell Terry J.;
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作者单位

Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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入库时间 2022-08-17 13:13:40

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1. Publisher's Note: 'Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers' [Appl. Phys. Lett. 101, 051111 (2012)] [J] . Krishna C. Mandal, Peter G. Muzykov, J. Russell Terry Applied Physics Letters . 2012,第9期

机译：出版商注：“ n型4H-SiC外延层上低能量范围内的高灵敏度X射线探测器” [Appl。物理来吧101，051111（2012）]
2. Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers [J] . Krishna C.Mandal, Peter G.Muzykov, J.Russell Terry Applied Physics Letters . 2012,第5期

机译：n型4H-SiC外延层上低能量范围内的高灵敏度X射线探测器
3. Publisher's Note: “Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission” [Appl. Phys. Lett. 101, 202402 (2012)] [J] . Greer A. A., Gray A. X., Kanai S., Applied Physics Letters . 2013,第1期

机译：出版者的注释：“观察到具有驻波硬X射线光发射的退火的Ta / CoFeB / MgO磁性隧道结中硼的扩散” [Appl。物理来吧101，202402（2012）]
4. Design, Fabrication, Characterization, and Evaluation of X-ray Detectors Based on n-type 4H-SiC Epitaxial Layer [C] . K. C. Mandal, P. G. Muzykov, J. R. Terry Symposium on wide bandgap semiconductor materials and devices;Meeting of the Electrochemical Society . 2012

机译：基于n型4H-SiC外延层的X射线探测器的设计，制造，表征和评估
5. High Resolution Radiation Detectors Based on 4H-SiC N-Type Epitaxial Layers and Pixilated CdZnTe Single Crystal Devices [D] . Oner, Cihan. 2018

机译：基于4H-SiC N型外延层和像素Cdznte单晶装置的高分辨率辐射检测器
6. Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers [O] . Krishna C. Mandal, Peter G. Muzykov, J. Russell Terry 2012

机译：高能量X射线探测器在N型4H-SIC外延层上的低能量范围内

Publisher’s Note: “Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers” [Appl. Phys. Lett. 101, 051111 (2012)]

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