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Field emission from single-crystalline HfC nanowires

机译:HfC单晶纳米线的场发射

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摘要

Single HfC nanowire field emitter/electrode structures have been fabricated using nano-assembling and electron beam induced deposition. Field ion microscopy has been applied to study the atomic arrangement of facets formed on a field evaporation-modified HfC nanowire tip. Field evaporation and crystal form studies suggest that the {111} and {110} crystal planes have lower work functions, while the {100}, {210}, and {311} planes have higher work functions. Field emission measurement permits us to obtain that the work function of the {111} crystal plane is about 3.4 eV.
机译:单个HfC纳米线场致发射器/电极结构已使用纳米组装和电子束诱导沉积进行了制造。场离子显微镜已用于研究在场蒸发改性的HfC纳米线针尖上形成的刻面的原子排列。场蒸发和晶体形式研究表明,{111}和{110}晶面的功函较低,而{100},{210}和{311}面的功函较高。场发射测量使我们能够获得{111}晶面的功函数约为3.4 eV。

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