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Magnetism of CoFe2O4 ultrathin films on MgAl2O4 driven by epitaxial strain

机译:外延应变驱动MgAl2O4上CoFe2O4超薄膜的磁性

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摘要

We report on the correlations between magnetic anisotropy and strain state in CoFe2O4 ultrathin films grown on MgAl2O4(100) and MgAl2O4(111) substrates. By local strain analysis using the geometric phase method, a significant in-plane compressive strain is observed for the (001) orientation while a full relaxation is detected for the (111) orientation. The relaxation process in CoFe2O4(111) layers induces interface dislocations and a large amount of antiphase boundaries while a pseudomorphic growth is observed for the (001) direction, decreasing significantly the density of antiphase boundaries. By comparing the magnetoelastic energy terms, the correlation between strain state and resultant magnetization is discussed.
机译:我们报道了在MgAl 2 O 4 上生长的CoFe 2 O 4 超薄膜中磁各向异性与应变状态之间的关系。 inf>(100)和MgAl 2 O 4 (111)衬底。通过使用几何相位方法的局部应变分析,可以观察到(001)方向明显的面内压缩应变,而检测到(111)方向完全松弛。 CoFe 2 O 4 (111)层中的弛豫过程会引起界面位错和大量的反相边界,而在(001)方向上观察到了假晶生长,并逐渐减小反相边界的密度显着提高。通过比较磁弹性能项,讨论了应变状态与磁化强度之间的相关性。

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