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Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission

机译:具有增强的受激发射光谱的InAs / InP量子破折号激光器

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摘要

We report on the demonstration of 50?nm (full-width at half-maximum) broadband stimulated emission from a chirped AlGaInAs barrier thickness multi-stack InAs/InP quantum dash (Qdash) laser. The 2?μm wide uncoated Fabry-Perot (FP) ridge-waveguide laser exhibits a total power of 0.18?W, corresponding to an average spectral power density of 3.5?mWm, under pulsed current conditions. Intentional extended inhomogeneity across the Qdash stacks have been attributed to the enhancement of broadband emission.
机译:我们报告了the的AlGaInAs势垒厚度多叠层InAs / InP量子破折号(Qdash)激光器演示的50?nm(半峰全宽)宽带激发发射的演示。 2微米宽的未镀膜法布里-珀罗(FP)脊形波导激光器在脉冲电流条件下的总功率为0.18瓦,相当于平均光谱功率密度为3.5瓦/纳米。跨Qdash堆栈的故意扩展的不均匀性已归因于宽带发射的增强。

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