Diameter-dependent boron diffusion in silicon nanowire-based transistors

摘要

We analyzed the carrier profile in silicon nanowire-based tunnel-FETs as a function of nanowire diameter using scanning spreading resistance microscopy. The nanowires were etched into an epitaxially grown stack, of which the top layer was in situ boron doped and the top contact was implanted. We revealed a significantly reduced boron diffusion inside narrower nanowires and a nonuniform diffusion depth in wider nanowires. Using process simulations, we attribute the latter to a reduced transient enhanced diffusion close to the nanowire sidewall caused by the recombination of excess interstitials. The shallower profile in narrower nanowires is related to an enhanced interstitial annihilation.