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Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

机译:X射线同步加速器脉冲的光电测量:概念验证

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Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the ∼50 ps x-ray pulse width convoluted with the ∼200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.
机译:使用光电导共面带状线设备进行的光电检测已用于测量X射线同步加速器脉冲的时间分布,这是一种概念验证证明,可能会导致改进的时间分辨X射线研究。在12 samplingkeV X射线和800 nm激光脉冲之间的电流与时间延迟之间的激光采样表明,约50 ps的x射线脉冲宽度与导带载流子的约200 ps寿命相混淆。对于注入了8 MeV质子的GaAs,观察到的时间曲线更接近X射线脉冲宽度。质子在X射线采样的整个深度上都会产生缺陷,从而捕获X射线激发的传导电子,并使电激发的寿命扩展最小化。

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