Enhanced InAs nanopillar electrical transport by in-situ passivation

摘要

We investigate the effects of in-situ passivation on the electrical transport of InAs nanopillars (NPs) grown on InAs (111)B substrates via selective-area epitaxy. Before passivation, the transport properties of InAs NPs, studied by single-NP field-effect transistors, are highly dependent on NP dimensions. With diameters ranging from 70 nm to 200 nm, we find significant differences in resistivity and extracted field-effect mobility (μeff). Growing a 6 nm InP shell for in-situ passivation significantly enhances these transport properties of InAs channel with diameter-independent μeff as high as 6900 cm2/V s. Such heterostructures have the potential as future high electron mobility transistors.