Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model

摘要

The unipolar resistive switches are investigated in silicon highly rich SiOx (x < 0.75) films. The as-deposited SiO0.73 films contain high concentration (1.0 × 1019 cm-3) of silicon dangling bonds (Si-DBs) and are rich in SiO2≡Si–Si and O3≡Si–Si configurations. Unlike the currently reported normal silicon-rich SiOx (x > 1.8) based devices, our Pt/SiO0.73/Pt devices operate at lower voltage regime (<2.0 V) and exhibit much lower resistance (∼30 Ω). The reset voltage (∼0.7 V) is lower than set voltage (∼1.7 V) and the performance is reduced in the vacuum environment. We propose a Si-DBs percolation model to explain the above characteristics. The experimental evidences for supporting our model are presented and discussed.