Volmer-Weber growth of AlSb on Si(111)

摘要

AlSb is grown by molecular beam epitaxy. The evolution and the relaxation of the deposited AlSb layer is investigated by synchrotron-based in situ grazing incidence x-ray diffraction (GID), and the analysis of the real space distribution is performed by atomic force microscopy. AlSb forms islands with (111)A polarity and {110} surface orientations with different side facets following the Volmer-Weber growth mode. GID investigations reveal facet rods originating from AlSb{110} islands. It is shown that a concentration of only 0.7% AlSb{110} oriented domains influences the diffraction pattern in such a way that additional crystal truncation rods parallel to the surface appear.