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“U-turn” feature in the efficiency-versus-current curve of GaInN/GaN light-emitting diodes

机译:GaInN / GaN发光二极管的效率-电流曲线中的“掉头”特征

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摘要

The onset of the efficiency droop in GaInN/GaN blue light-emitting diodes (LEDs), i.e., the maximum-efficiency point, typically occurs at current densities of 1–10 A/cm and the efficiency decreases monotonically beyond the onset. At typical operating current densities (10–100 A/cm), LEDs are strongly affected by the droop. At cryogenic temperatures, an increase in the efficiency, i.e., a “U-turn” feature, is found in the droop regime of the efficiency-versus-current curve. The occurrence of the U-turn feature coincides with a distinct increase in device conductivity, which is attributed to an enhancement in p-type conductivity that in turn increases the injection efficiency.
机译:GaInN / GaN蓝光发光二极管(LED)中效率下降的开始,即最大效率点,通常在1–10 A / cm的电流密度下发生,并且效率单调地下降超过开始。在典型的工作电流密度(10–100 A / cm)下,LED受压降的影响很大。在低温温度下,效率-电流-曲线的下垂状态中发现效率增加,即“掉头”特征。掉头特征的发生与器件电导率的明显增加相吻合,这归因于p型电导率的提高,进而提高了注入效率。

著录项

  • 来源
    《Applied Physics Letters》 |2014年第22期|1-4|共4页
  • 作者单位

    Future Chips Constellation, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:10:35

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