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Monitoring Si growth on Ag(111) with scanning tunneling microscopy reveals that silicene structure involves silver atoms

机译:用扫描隧道显微镜监测Ag(111)上的Si生长表明硅结构涉及银原子

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摘要

Using scanning tunneling microscopy (STM), the elaboration of the so-called silicene layer on Ag(111) is monitored in real time during Si evaporation at different temperatures. It is shown that the growth of silicene is accompanied by the release of about 65% of the surface Ag atoms from the Si covered areas. We observe that Si islands develop on the Ag terraces and Si strips at the Ag step edges, progressively forming ordered , R13.9°, and dotted phases. Meanwhile, displaced Ag atoms group to develop additional bare Ag terraces growing round the Si islands from the pristine Ag step edges. This indicates a strong interaction between Si and Ag atoms, with an important modification of the Ag substrate beneath the surface layer. This observation is in contradiction with the picture of a silicene layer weakly interacting with the unreconstructed Ag substrate, and strongly indicates that the structure of silicene on Ag(111) corresponds either to a Si-Ag surface alloy or to a Si plane covered with Ag atoms.
机译:使用扫描隧道显微镜(STM),在不同温度下进行Si蒸发期间,实时监控Ag(111)上所谓的硅层的形成情况。结果表明,硅的生长伴随着从硅覆盖区域释放出约65%的表面Ag原子。我们观察到,硅岛在银阶地上发展,在银阶边缘处形成硅带,逐渐形成有序,R13.9°和点状相。同时,置换的Ag原子团从原始的Ag台阶边缘开始在Si岛周围生长出额外的裸露的Ag台地。这表明Si和Ag原子之间有很强的相互作用,并且表面层下面的Ag衬底发生了重要的变化。该观察结果与硅层与未重建的Ag衬底弱相互作用的图片相矛盾,并强烈表明Ag(111)上的硅结构要么对应于Si-Ag表面合金,要么对应于被Ag覆盖的Si平面原子。

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  • 来源
    《Applied Physics Letters》 |2014年第21期|1-5|共5页
  • 作者单位

    Sorbonne Universités, UPMC Univ Paris 06, UMR 7588 Institut des NanoSciences de Paris, 4 place Jussieu, F-75005 Paris, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:10:34

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