In situ Raman spectroscopy for growth monitoring of vertically aligned multiwall carbon nanotubes in plasma reactor

摘要

Portable and highly sensitive Raman setup was associated with a plasma-enhanced chemical vapor deposition reactor enabling in situ growth monitoring of multi-wall carbon nanotubes despite the combination of huge working distance, high growth speed and process temperature and reactive plasma condition. Near Edge X-ray absorption fine structure spectroscopy was used for ex situ sample analysis as a complementary method to in situ Raman spectroscopy. The results confirmed the fact that the “alternating” method developed here can accurately be used for in situ Raman monitoring under reactive plasma condition. The original analytic tool can be of great importance to monitor the characteristics of these nanostructured materials and readily define the ultimate conditions for targeted results.