Two-dimensional electron gas in monolayer InN quantum wells

摘要

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10cm (or 1.25 × 10cm per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.