Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

摘要

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm2 V−1 s−1 at room temperature to 49 000 cm2 V−1 s−1 at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.