Ambipolar bistable switching effect of graphene

摘要

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminalnconfiguration. An opposite sequence of switching with different charge carriers, holes, and electronsnis found. The charging and discharging effect is proposed to explain this ambipolar bistablenhysteretic switching. To confirm this hypothesis, one-level transport model simulations includingncharging effect are performed and the results are consistent with our experimental data. Methods ofnimproving the on/off ratio of graphene resistive switching are suggested. © 2010 American Institutenof Physics. u0004doi:10.1063/1.3532849