Reverse Schottky-asymmetry spin current detectors

摘要

semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved thenfollowing: u00021u0003 demonstration of u000250% spin polarization in silicon, resulting from the increase ofndetection efficiency by elimination of the ferromagnet/silicon interface on the transport channelndetector contact and u00022u0003 evidence of spin transport at temperatures as high as 260 K, enabled by annincrease in detector Schottky barrier height. © 2010 American Institute of Physics.nu0004doi:10.1063/1.3504659