Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics

摘要

Dual-gate organic thin-film transistors (OTFTs) of octathio[8]circulene (1) with ionic liquid and SiO2 gate dielectrics lead to good transistor performance with a high on/off ratio ( ∼ 105), a low threshold voltage ( ∼ −5 V), a low subthreshold slope ( ∼ 150 mV/decade), and low power operation, thus surpassing the performance of the single-gate OTFTs of 1. This operation is a promising method for improving the carrier concentrations in OTFTs and for realizing high-performance OTFTs.