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首页> 外文期刊>Applied Physics Letters >Fourfold symmetric anisotropic magnetoresistance basedrnon magnetocrystalline anisotropy and antiphase boundariesrnin reactive sputtered epitaxial Fe3O4 films
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Fourfold symmetric anisotropic magnetoresistance basedrnon magnetocrystalline anisotropy and antiphase boundariesrnin reactive sputtered epitaxial Fe3O4 films

机译:反应性溅射外延Fe3O4薄膜中基于四重对称各向异性磁阻的非磁晶各向异性和反相边界

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摘要

The fourfold symmetric anisotropic magnetoresistance u0001AMRu0002 at high fields in epitaxial Fe3O4rnfilms, which is incompatible with the traditional twofold symmetry, was found to be independentrnwith the current direction but associated with their magnetocrystalline anisotropy. u0001001u0002-, u0001110u0002-, andrnu0001112u0002-oriented Fe3O4 films show fourfold symmetry in AMR while twofold symmetry appears forrnu0001111u0002-oriented Fe3O4 films. The cubic magnetocrystalline anisotropy field superimposed onto thernexternal magnetic field modifies the alignment of the spins near antiphase boundaries, leading to thernoscillating scattering rate for the transport electrons across antiphase boundaries and thus therncorresponding fourfold symmetry in AMR.
机译:发现外延Fe3O4rn薄膜中高场的四重对称各向异性磁阻u0001AMRu0002与传统的二重对称性不相容,与电流方向无关,但与它们的磁晶各向异性有关。面向u0001001u0002-,u0001110u0002-和rnu0001112u0002的Fe3O4薄膜在AMR中显示出四重对称性,而对于面向rnu0001111u0002的Fe3O4薄膜则呈现出双重对称性。叠加在外部磁场上的立方磁晶各向异性场改变了自旋在反相边界附近的排列,从而导致了跨反相边界的传输电子的电子振荡散射速率,因此在AMR中具有相应的四重对称性。

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  • 来源
    《Applied Physics Letters》 |2010年第9期|p.1-3|共3页
  • 作者单位

    Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology,Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072,People’s Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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