High quality solution processed carbon nanotube transistors assembled by dielectrophoresis

摘要

We report on high quality individual solution processed single-walled carbon nanotube u0001SWNTu0002nfield effect transistors assembled from a commercial surfactant free solution via dielectrophoresis.nThe devices show field effect mobilities up to 1380 cm2n/V s and on-state conductance up to 6 u0001S.nThe mobility values are an order of magnitude improvement over previous solution processednSWNT devices and close to the theoretical limit. These results demonstrate that high quality SWNTndevices can be obtained from solution processing and will have significant impact in high yieldnfabrication of SWNT nanoelectronic devices. © 2010 American Institute of Physics.