Mapping current profiles of point-contacted graphene devices using single-spin scanning magnetometer

摘要

We demonstrate two-dimensional mapping of current flow in graphene devices by using a single-spin scanning magnetometer based on a nitrogen-vacancy defect center in diamond. We first image the stray magnetic field generated by the current and then reconstruct the current density map from the field data. We focus on the visualization of current flow around a small sized current source of ～500 nm diameter, which works as an effective point contact. In this paper, we study two types of point-contacted graphene devices and find that the overall current profiles agree with the expected behavior of electron flow in the diffusive transport regime. This work could offer a route to explore interesting carrier dynamics of graphene including ballistic and hydrodynamic transport regimes.