Light modulation of magnetization switching in PMN-PT/Ni heterostructure

摘要

The (011) Pb (Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_3 (PMN-PT)/Ni heterostructure was prepared, and the influence of light on magnetization reversal behaviors of the Ni layer was investigated. We found that the ferroelectric domain of the PMN-PT substrate was tuned by a photostrictive effect, and it further changes the magnetization state of the adjacent Ni layer. Additionally, with electric field polarization, the PMN-PT/Ni heterostructure exhibits controllable magnetization switching behaviors under the application of a proper light intensity. It provides a reliable way to manipulate the magnetization switching process, which is promising for the design and implementation of low power memory and spintronic devices.