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Negative refraction inspired polariton lens in van der Waals lateral heterojunctions

机译:负折射在van der Waals横向异电功能中启发了PolaritiNo镜头

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摘要

Controlling the phase of free-space waves and surface-confined polaritons is fundamentally important for many applications such as wave-front shaping, metasurface arrays, beam-steering surfaces, and optical modulators. Conventional lenses rely on the curvature of bulk transparent dielectrics to achieve gradual phase accumulation to convert plane waves into converging spherical waves. However, the same concept is not suitable for in-plane polariton waves, due to the large momentum mismatch between polariton modes in different effective index (n(eff)) media. Here, we propose an approach for planar-polariton refractive optics, by constructing curved lateral heterojunctions with one side hosting positive n(eff) polaritons and negative n(eff) polaritons on the other side. The magnitude of n(eff) maintains momentum matching, but the sign difference across the curved interface results in phase accumulation. We further demonstrate a proof of concept of this polariton lensing in a real material system, comprising lateral heterojunctions of 2D h-BN and graphene on 3D SiC, with lens resolutions 100 times smaller than the illumination wavelengths. Our results applying the concepts of in-plane negative refraction with phase modulation to design optical functionality open new opportunities for polariton wave-front control.
机译:控制自由空间波和表面密闭的极性子的相位对许多应用诸如波前成形,元表面阵列,光束转向表面和光学调制器的许多应用来说是根本的。常规镜片依靠块透明电介质的曲率来实现逐渐相位累积以将平面波转换为会聚球面波。然而,由于不同有效索引(n(eff))介质的ParitiTon模式之间的大动力失配,相同的概念不适用于平面内极性波。在这里,我们提出了一种方法,用于通过在另一侧托管正N(EFF)极性和负N(EFF)极性的弯曲的横向异质结来构建弯曲的横向异质结。 n(eff)的幅度保持势匹配,但曲线界面的符号差异导致相位累积。我们进一步展示了这种Parititon镜片的概念证明,该概念在真实的材料系统中,包括在3D SiC上的2D H-Bn和Graphene的横向异质结,透镜分辨率比照明波长小100倍。我们的结果应用了与相位调制的面内负折射的概念,以设计光学功能开辟了Polariton波前控制的新机会。

著录项

  • 来源
    《Applied Physics Letters》 |2019年第22期|221101.1-221101.5|共5页
  • 作者单位

    China Acad Engn Phys Inst Chem Mat Mianyang 621900 Sichuan Peoples R China;

    China Acad Engn Phys Inst Chem Mat Mianyang 621900 Sichuan Peoples R China;

    China Acad Engn Phys Inst Chem Mat Mianyang 621900 Sichuan Peoples R China;

    Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Penn Dept Elect & Syst Engn Philadelphia PA 19104 USA;

    China Acad Engn Phys Inst Chem Mat Mianyang 621900 Sichuan Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 22:17:47

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