Hybrid ZnO nanowire networked field-effect transistor with solution- processed InGaZnO film

摘要

We examined the effect on the transistor properties of the spatial gaps between nanowires that may randomly exist in the nanonet-structured, ZnO transistor. A hybrid-type, ZnO nanowire-based transistor was fabricated by combining the nanonet-structured ZnO nanowire arrays with a solution-deposited InGaZnO (IGZO) film and its performance was compared with that of the device without the IGZO film. By filling the disconnected carrier paths (gaps) between the arrayed ZnO nanowires with IGZO solution coating, much improved transistor characteristics, such as a narrow threshold voltage distribution and minimized multiple turn-on behavior, were obtained, which highlighted the importance of the gap filling in the nanonet transistors.