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Small-signal equivalent circuit for double quantum dots at low-frequencies

机译:低频双量子点的小信号等效电路

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摘要

Due to the quantum nature of current flow in single-electron devices, new physical phenomena can manifest when probed at finite frequencies. Here, we present a semiclassical small-signal model approach to replace complex single-electron devices by parametric circuit components that could be readily used in analog circuit simulators. Our approach is based on weakly driven quantum two-level systems, and here, we use it to calculate the low frequency impedance of a single-electron double quantum dot (DQD). We find that the total impedance is composed of three elements that were previously considered separately: a dissipative term, corresponding to the Sisyphus resistance, and two dispersive terms, composed of the quantum and tunneling capacitance. Finally, we combine the parametric terms to understand the interaction of the DQD with a slow classical electrical oscillator which finds applications in nonresonant state readout of quantum bits and parametric amplification.
机译:由于单电子设备中电流的量子性质,以有限的频率探测时会出现新的物理现象。在这里,我们提出了一种半经典的小信号模型方法,用参数电路组件代替复杂的单电子设备,这些组件可以很容易地在模拟电路模拟器中使用。我们的方法基于弱驱动的量子两级系统,在这里,我们使用它来计算单电子双量子点(DQD)的低频阻抗。我们发现总阻抗由先前分别考虑的三个元素组成:一个耗散项,对应于西西弗斯电阻;以及两个色散项,由量子和隧穿电容组成。最后,我们结合参数项来理解DQD与慢速经典电振荡器之间的相互作用,该振荡器在量子比特的非谐振状态读出和参数放大中找到了应用。

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  • 来源
    《Applied Physics Letters》 |2019年第25期|253505.1-253505.5|共5页
  • 作者单位

    Hitachi Cambridge Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

    Hitachi Cambridge Lab, JJ Thomson Ave, Cambridge CB3 0HE, England|Donostia Int Phys Ctr, Paseo Manuel Lardizabal 4, Donostia San Sebastian 20018, Spain;

    Hitachi Cambridge Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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