Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

摘要

We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at similar to 3.72 mu m on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 x 10(10) and 1 x 10(10) cm Hz(1/2) W-1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 44 nm and the quality factor similar to 80. The peak quantum efficiency was 60% where the enhancement due to the resonant cavity was similar to 20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene. (C) 2019 Author(s).