Organic thin-film transistors with nanocomposite dielectric gate insulator

摘要

High-performance organic thin-film transistors (OTFTs) with a nanoparticle composite dielectric layer have been demonstrated. The dielectric layer consists of cross-linked poly-4-vinylphenol (PVP) and high-dielectnic titanium dioxide (TiO2) nanopartilcles. Because of the nanosize of TiO2, it disperses well in the organic solvent, which makes it possible to use solution-processable methods to prepare the dielectric layer. OTFrs with pentacene as the semiconducting layers have been demonstrated; it was found that the OTFTs with the nanocomposite dielectric layer have. higher field-induced current than that of conventional devices because the dielectric constant of the gate insulator is increased. This finding opens an interesting direction for the preparation of high-performance OTFTs without complicated sputtering of high-kappa dielectric materials. (C) 2004 American Institute of Physics.