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Microstructure and ferroelectric properties of sol-gel derived Bi3.15Nd0.85Ti3O12 thin films on Pt/Ti/SiO2/Si(100)

机译:Pt / Ti / SiO2 / Si(100)上溶胶-凝胶法制备Bi3.15Nd0.85Ti3O12薄膜的显微结构和铁电性能

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摘要

Bi3.15Nd0.85Ti3O12 (BNdT) thin films were deposited on Pt/Ti/SiO2/Si Substrates using a sol-gel process. The film annealed at 750degreesC is composed of grains of 50-100 nm in diameter. The fine grains show nearly random orientations. "Micropores" were frequently observed at the junctions of the grains and they are mostly amorphous, while sometimes containing very fine crystalline particles with sizes of only a few nanometers. The BNdT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization and the coercive field were in the range of 41-43 muC/cm(2) and 70-84 kV/cm, respectively. The BNdT capacitors did not show any significant fatigue up to 5 X 10(9) switching cycles at a frequency of 1 MHz. (C) 2004 American Institute of Physics.
机译:使用溶胶-凝胶工艺将Bi3.15Nd0.85Ti3O12(BNdT)薄膜沉积在Pt / Ti / SiO2 / Si衬底上。在750℃退火的膜由直径为50-100nm的晶粒组成。细晶粒显示几乎随机的取向。经常在晶粒的交界处观察到“微孔”,它们大多是非晶态的,而有时则包含非常细小的晶体颗粒,其大小仅为几纳米。具有Pt顶部电极的BNdT薄膜电容器表现出出色的铁电性能。剩余极化和矫顽场分别在41-43 muC / cm(2)和70-84 kV / cm的范围内。 BNdT电容器在1 MHz的频率下,直到5 X 10(9)开关周期都没有表现出明显的疲劳。 (C)2004美国物理研究所。

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