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High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers

机译:基于薄膜压电叉指换能器的高频声表面波装置

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摘要

Using high-quality epitaxial c-axis Pb(Zr0.2Ti0.8)O-3 films grown by off-axis magnetron sputtering onto metallic (001) Nb-doped SrTiO3 substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducers consist of a series of ferroelectric domains with alternating polarization states. The artificial modification of the ferroelectric domain structure is performed by using an atomic force microscope tip as a source of electric field, allowing local switching of the polarization. Devices with 1.2 and 0.8 mum wavelength, defined by the modulation period of the polarization, and corresponding to central frequencies in the range 1.50-3.50 GHz have been realized and tested. (C) 2004 American Institute of Physics.
机译:使用通过离轴磁控溅射在金属(001)掺Nb的SrTiO3衬底上生长的高质量外延c轴Pb(Zr0.2Ti0.8)O-3薄膜,一种基于周期的非常规薄膜表面声波器件压电换能器得以实现。压电换能器由一系列具有交替极化状态的铁电畴组成。通过使用原子力显微镜尖端作为电场源对铁电畴结构进行人工修改,从而实现极化的局部切换。已经实现并测试了具有1.2和0.8毫米波长的设备,该设备由极化的调制周期定义,并且对应于1.50-3.50 GHz范围内的中心频率。 (C)2004美国物理研究所。

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