Ferroelectric domain reversal in LiNbO_(3) crystals using high-voltage atomic force microscopy

摘要

High-voltage atomic force microscopy is used for nanoscale polarization reversal in LiNbO_(3) single crystals. The tailored domain patterns have been observed using piezoelectric force microscopy and etching techniques. A variety of domain shapes preserving the elementary crystallographic symmetry have been obtained. It has been found that the sidewise domain wall motion under the huge electric field near the apex of atomic force microscope tip occurs in isotropic manner. The dependence of the domain equilibrium size on the applied high voltage is analyzed and discussed.