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Reduction of spin transfer by synthetic antiferromagnets

机译:减少合成反铁磁体的自旋转移

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Synthetic antiferromagnetic layers (SAF) are incorporated into spin transfer nanopillars giving a layer composition [Co_(bottom)/Ru/Co_(fixed)]/Cu/Co_(free), where square brackets indicate the SAF. The Co_(bottom) and Co_(fixed) layers are aligned antiparallel (AP) by strong indirect exchange coupling through the Ru spacer. All three magnetic layers are patterned, so this AP alignment reduces undesirable dipole fields on the Co_(free) layer. Adding the Co_(bottom)/Ru layers reduces the spin polarization of the electron current passing through the nanopillar, leading to a decreased spin-torque per unit current incident on the Co_(free) layer. This may be advantageous for device applications requiring a reduction of the effects of a spin-torque, such as nanoscale current-perpendicular-to-plane magnetoresistive read heads.
机译:合成反铁磁层(SAF)被合并到自旋转移纳米柱中,形成层组成[Co_(底部)/ Ru / Co_(固定)] / Cu / Co_(游离),其中方括号表示SAF。 Co_(底部)和Co_(固定)层通过通过Ru间隔物的强间接交换耦合反平行(AP)对齐。所有三个磁性层都经过了图案化,因此该AP对齐减少了Co_(free)层上的不良偶极子场。添加Co_(底部)/ Ru层会降低通过纳米柱的电子电流的自旋极化,从而导致入射到Co_(自由)层上的每单位电流的自旋扭矩降低。这对于需要减小自旋扭矩的影响的设备应用(例如纳米级电流垂直于平面的磁阻读取头)可能是有利的。

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