Large effects due to electron-phonon-impurity interference in the resistivity of Pt/C-Ga composite nanowires

摘要

The temperature-dependent resistivity of highly disordered Pt/C-Ga composite nanowires is shown to be well described by the interference of electron-phonon scattering and elastic electron scattering from boundaries and defects. The strongly disordered nature of these wires, combined with a high value of their Debye temperature, are responsible for the pronounced nature of the interference effects in their resistivity.