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Double-well model of dielectric relaxation current

机译:介电弛豫电流的双阱模型

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We show that a straightforward account of dielectric relaxation current in glasses follows from a semiclassical treatment of the double-well model [P. W. Anderson, B. I. Halperin, and C. M. Varma, Philos. Mag. 25, 1 (1972) and W. A. Phillips, J. Low Temp. Phys. 7, 351 (1972)] explaining the linear specific heat of glasses at low temperature. The current is obtained from the field-induced tunneling of the glass between the minima of its potential energy surface, and is found to have the experimentally observed linear dependence on field and inverse dependence on time. The effects of temperature and prior biases are briefly discussed, as well as the relation of the model to the theory of charge trapping. No dielectric relaxation is expected in a perfect insulating crystal, raising the important technological question of how perfect high-k dielectrics like HfO_(2) and ZrO_(2) must be in order to serve as gate dielectrics in transistors.
机译:我们显示,玻璃中介电弛豫电流的直接解释来自双井模型的半经典处理[P. W. Anderson,B。I. Halperin和C.M. Varma,Philos。魔术师25,1(1972)和W. A. Phillips,J.低温。物理7,351(1972)]解释了玻璃在低温下的线性比热。电流是从场致玻璃的势能面最小值之间的场致隧穿中获得的,并且发现它具有实验观察到的对场的线性依赖性和对时间的逆依赖性。简要讨论了温度和先验偏置的影响,以及模型与电荷俘获理论的关系。在理想的绝缘晶体中不会出现介电弛豫,这提出了重要的技术问题,即像HfO_(2)和ZrO_(2)这样的理想高k电介质必须用作晶体管的栅极电介质。

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