Strain mapping with parts-per-million resolution in synthetic type-Ib diamond plates

摘要

A general method to map strain with parts per million (ppm) resolution in single-crystal wafers and plates is demonstrated. An x-ray technique has been used to obtain separate maps of strain and tilt across synthetic diamond growth sectors. Data consisting of rocking curve maps obtained with a charge coupled device detector were analyzed. The strain results image the growth sectors and reveal a strain pileup near the sector boundaries. The diamond was yellow to the eye due to nitrogen impurities. Not only the topography of the strain map, but also the strain magnitudes, are consistent with the strain arising from nitrogen impurities. High strain resolution in the ppm range is needed to observe these effects.