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Femtosecond spectroscopy of unipolar nanometer-scale high-field transport of holes in Al_(0.08)G_(0.92)As

机译:飞秒光谱的Al_(0.08)G_(0.92)As中单极纳米级空穴的高场传输

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摘要

High-field transport in GaAs is investigated tracing ultrafast modifications of the Franz-Keldysh absorption spectrum of a Al_xGa_(1-x)As heterostructure diode. A sophisticated sample design allows us to isolate the unipolar tranport properties of holes in combination with a nanometer scale definition of layers for both photoexcitation and detection of the propagating carrier distribution. Transient velocities and spatial broadening of the hole ensemble are directly measured for electric fields between 15 and 200 kV/cm comparing room temperature operation to results for T_L=4 K. Even at low temperatures, the transient hole velocities are found not to exceed a value of 1.2 X 10~7 cm/s which is a result of ultrafast optical phonon emission with a scattering time below 25 fs.
机译:研究了GaAs中的高场传输,追踪了Al_xGa_(1-x)As异质结构二极管的Franz-Keldysh吸收光谱的超快变化。复杂的样品设计使我们能够结合光的纳米级定义层以及光传播和载流子分布检测来隔离空穴的单极传输性质。将室温操作与T_L = 4 K的结果进行比较,可直接测量15至200 kV / cm之间电场的瞬态速度和空穴整体空间扩展。即使在低温下,瞬态空穴速度也不会超过一个值散射速度低于25 fs的超快光学声子发射的结果是1.2 X 10〜7 cm / s。

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