Response to 'Comment on 'Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors' ' [Appl. Phys. Lett. 86, 016101 (2005)]

摘要

In the Comment, Oh et al. argue that our explanation of current collapse and current recovery at high drain bias cannot be effectively explained by impact ionization. We disagree. In support of their argument, they present their own measurements of current-voltage characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). While their characteristics are superficially similar to the current-voltage characteristics of the GaN metal semiconductor field-effect transistors (MESFET) shown in Ref. 2, there are critical differences in the curves. The differences reflect fundamental differences between the current collapse phenomena in HFETs and MESFETs, despite the assertion to the contrary in Ref. 1.