Optical characteristics and microstructure of ZnO quantum dots-SiO_2 nanocomposite films prepared by sputtering methods

摘要

ZnO quantum dots (QDs)-SiO_2 nanocomposite films were prepared using the target-attached radio-frequency sputtering. The transmission electron microscopy revealed the uniform dispersion of ZnO QDs with diameters about 2-7 nm in amorphous SiO_2 matrix. The photoluminescence showed that small ZnO QDs are able to emit white light with luminescence spectra similar to those of the present GaN-based light emitting diode (LED). The calculated chromaticity coordinates of emitting light evidenced the feasibility of ZnO QDs-SiO_2 nanocomposite films as the fluorescence material in optoelectronic devices.