Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy

摘要

Intense mid-infrared (λ ～ 2 μm) room temperature electroluminescence from metal organic vapor phase epitaxy (MOVPE) grown type-Ⅰ single AlSb/InAsSb/AlSb quantum wells (QWs) is reported. The spectral position of the electroluminescent peaks is in good agreement with k·p envelope function calculation in the frame of four-band Kane's model taking into account the intermixing of s and p states in the deep quantum well. A four times increase of the emission intensity with temperature increasing from 77 to 300 K can be explained by highly efficient radiative recombination of the electrons injected into the narrow AlSb/InAsSb/AlSb QW due to its specific design, leading to Auger process suppression.