Organic metal electrodes for controlled p- and n-type carrier injections in organic field-effect transistors

摘要

Fine control of p-, n-, and ambipolar-type field-effect transistor (FET) operations is successfully demonstrated in prototypical single-crystal organic FETs with use of chemically tunable nature of Fermi energy in tetrathiafulvalene-tetracyanoguinodimethane-based organic metal electrodes. Carrier-type preference and rectifying nature in the organic-organic contacts are revealed in terms of the FET operations as well as of the all-organic Schottky diode characteristics.