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首页> 外文期刊>Applied Physics Letters >Size control and midinfrared emission of epitaxial PbTe/CdTe quantum dot precipitates grown by molecular beam epitaxy
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Size control and midinfrared emission of epitaxial PbTe/CdTe quantum dot precipitates grown by molecular beam epitaxy

机译:通过分子束外延生长的外延PbTe / CdTe量子点沉淀物的尺寸控制和中红外发射

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摘要

Epitaxial quantum dots with symmetric and highly facetted shapes are fabricated by thermal annealing of two-dimensional (2D) PbTe epilayers embedded in a CdTe matrix. By varying the thickness of the initial 2D layers, the dot size can be effectively controlled between 5 and 25 nm, and areal densities as high as 3 × 10~(11) cm~(-2) can be achieved. The size control allows the tuning of the quantum dot luminescence over a wide spectral range between 2.2 and 3.7 μm. As a result, ultrabroadband emission from a multilayered quantum dot stack is demonstrated, which is a precondition for the development of superluminescent diodes operating in the near infrared and midinfrared.
机译:通过对嵌入CdTe矩阵中的二维(2D)PbTe外延层进行热退火,可以制造出具有对称且高度多面的形状的外延量子点。通过改变初始二维层的厚度,可以有效地将点尺寸控制在5至25 nm之间,并且可以实现高达3×10〜(11)cm〜(-2)的面密度。尺寸控制允许在2.2至3.7μm的宽光谱范围内调节量子点的发光。结果,证明了来自多层量子点堆叠的超宽带发射,这是开发在近红外和中红外下工作的超发光二极管的前提。

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